2P926A (KP926A) FET Transistor silicon n-type 450V / 16.5A, USSR

Description

2P926A (KP926A)
FET
Transistor silicon
n-type
450V / 16.5A,
USSR
2P926A ( KP926
А
ENG name) = 2
П
926A ( КP926
А
RUS name)
Lot of 1 pcs
New never used  / NOS / New Old Stock
Transistors 2P926A silicon epitaxial-planar field-effect with a gate based on a p-n junction and a vertical channel of n-type.
Designed for use in switching devices of electronic equipment for special purposes.
They are produced in a metal case with glass insulators and rigid leads.
Characteristics of field-effect transistors with a gate based on a p-n junction and an n-channel.
The inscription on the body of the transistor "опытный" -  is "experienced".
Transistors were produced in small batches for the needs of (mainly military) customers.
They are not mass-produced.
Characteristics
:
P MAX - the maximum permissible constant power dissipation of the field-effect transistor. - 50W
• U DS MAX - the maximum allowable drain-source voltage. 450V
• U GD
МАКС
- maximum allowable gate-drain voltage. 475V
• U GS
МАКС
- maximum allowable gate-source voltage. - 25V
• I D MAX - the maximum allowable drain current of the field-effect transistor. - 16.5A
• U GS cutoff - cutoff voltage of the field-effect transistor. The voltage between the gate and the source of a pn junction or IGBT transistor operating in depletion mode at which the drain current reaches a predetermined low value. -fifteen
• R DS - drain-source resistance in the open state of the field-effect transistor. Resistance between drain and source in the open state of the transistor at a given drain-source voltage, less than the saturation voltage. <0.1 ohM
• I G Leakage - gate leakage current. Gate current at a given voltage between the gate and the rest of the terminals, shorted together. <1 mA
• S - slope of the field-effect transistor characteristic. The ratio of the change in drain current to the change in gate voltage during an AC short circuit at the output of a transistor in a common-source circuit. > 2 (A / V)
• t urn-on time - turn-on time of the field-effect transistor. <100 nano sec
• t off - off time of the field-effect transistor. <100 nano sec
•
Т
- ambient temperature. -60 ... + 125 ° C (-76 ... 257 ° F)
• Case type: KT-9.
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